DMC3021LSD document number: ds32152 rev. 1 - 2 1 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product complementary pair enh ancement mode mosfet features ? low on-resistance ? n-channel: 21m ? @ 10v 32m ? @ 4.5v ? p-channel: 39m ? @ 10v 53m ? @ 4.5v ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? lead free/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? marking information: see page 6 ? ordering information: see page 6 ? weight: 0.072 grams (approximate) maximum ratings n-channel ? q1 @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 3) steady state t a = 25c t a = 85c i d 8.5 7.1 a pulsed drain current (note 4) i dm 26 a maximum ratings p- channel ? q2 @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 3) steady state t a = 25c t a = 85c i d -7.0 -4.5 a pulsed drain current (note 4) i dm -25 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 2.5 w thermal resistance, junction to ambient (note 3) r ja 50 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on fr-4 pcb, with minimum recommended pad layout. 4. repetitive rating, pulse width limited by junction temperature. so-8 top view top view d 1 s 1 g 1 d 2 s 2 g 2 n-channel mosfet p-channel mosfet s2 d1 s1 d2 g1 g2 d2 d1
DMC3021LSD document number: ds32152 rev. 1 - 2 2 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product electrical character istics n-channel ? q1 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 1 1.45 2.1 v v ds = v gs , i c = 250 a static drain-source on-resistance r ds (on) - 14 21 m v gs = 10v, i c = 7a 18 32 v gs = 4.5v, i c = 5.6a forward transfer admittance |y fs | - 8.1 - s v ds = 5v, i c = 7a diode forward voltage (note 5) v sd - 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 6) input capacitance c iss - 767 - pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 110 - pf reverse transfer capacitance c rss - 105 - pf gate resistance r g - 1.4 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge (4.5v) q g - 7.8 - nc v gs = 10v, v ds = 15v, i d = 9a total gate charge (10v) q g - 16.1 - nc gate-source charge q g s - 1.8 - nc gate-drain charge q g d - 2.5 - nc turn-on delay time t d ( on ) - 5.0 - ns v gs = 10v, v ds = 15v, r g = 6 ? , i d = 1a turn-on rise time t r - 4.5 - ns turn-off delay time t d ( off ) - 26.3 - ns turn-off fall time t f - 8.55 - ns 0 0.5 1 1.5 2 fig. 1 typical output characteristics v , drain-source voltage (v) ds 0 5 10 15 30 i, d r ai n c u r r e n t (a) d 25 20 v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs 0 5 10 15 20 25 30 01 2 34 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a
DMC3021LSD document number: ds32152 rev. 1 - 2 3 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product 0.01 0.1 1 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 2.5v gs 0 5 10 15 20 25 30 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d 0 0.01 0.02 0.03 0.06 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0.05 0.04 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance (normalized) ds(on) v = 10v i = 11.6a gs d v = 4.5v i = 10a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.01 0.02 0.03 0.0 5 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0.04 v = 10v i = 11.6a gs d v = 4.5v i = 10a gs d 0 0.4 0.8 1.2 1.6 2.0 2.4 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i, s o u r c e c u r r ent (a) s t = 25c a
DMC3021LSD document number: ds32152 rev. 1 - 2 4 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz c iss c oss c rss 0 5 10 15 20 25 30 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a electrical charact eristics p-channel @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1.0 a v ds = -30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -1 -1.7 -2.2 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 30 39 m v gs = -10v, i d = -4.3a 42 53 v gs = -4.5v, i d = -3.7a forward transfer admittance |y fs | - 7 - s v ds = -5v, i d = -4.3a diode forward voltage (note 5) v sd - -0.75 -1.0 v v gs = 0v, i s = -1.7a dynamic characteristics (note 6) input capacitance c iss - 1002 - pf v ds = -10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 125 - pf reverse transfer capacitance c rss - 118 - pf gate resistance r g - 13 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge (4.5v) q g - 10.1 - nc v gs = -4.5v, v ds = -15v, i d = -6a total gate charge (10v) q g - 21.1 - nc gate-source charge q g s - 2.8 - nc gate-drain charge q g d - 3.2 - nc turn-on delay time t d ( on ) - 10.1 - ns v gs = -10v, v ds = -15v, r g = 6 ? , i d = -1a turn-on rise time t r - 6.5 - ns turn-off delay time t d ( off ) - 50.1 - ns turn-off fall time t f - 22.2 - ns notes: 5. short duration pulse test used to minimize self-heating effect. 6. guaranteed by design. not subject to production testing.
DMC3021LSD document number: ds32152 rev. 1 - 2 5 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 fig. 11 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 10v gs v = 3.5v gs v = 4.0v gs 0 5 10 15 20 01 2 3 456 fig. 12 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 5 10 15 20 fig. 13 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0 0.02 0.04 0.06 0.10 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0.08 v = 10v gs v = 4.5v gs 0 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i , drain current (a) fig. 14 typical drain-source on-resistance vs. drain current and temperature d v = 10v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 15 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance (normalized) ds(on) v = 10v i = 10a gs d v = 4.5v i = 5a gs d fig. 16 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.01 0.02 0.03 0.04 0.05 0.08 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0.07 0.06 v = 10v i = 10a gs d v = 4.5v i = 5a gs d
DMC3021LSD document number: ds32152 rev. 1 - 2 6 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product 0 0.5 1.0 1.5 2.0 2.5 fig. 17 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0.4 0.6 0.8 1.0 1.2 1.4 v , source-drain voltage (v) sd fig. 18 diode forward voltage vs. current 0 4 8 12 16 20 i, s o u r c e c u r r en t (a) s t = 25c a 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 19 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz c iss c oss c rss 0 5 10 15 20 25 30 fig. 20 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i, d r ain-s o u r c e leaka g e c u r r en t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a ordering information (note 7) part number case packaging DMC3021LSD-13 so-8 2500/tape & reel notes: 7. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information to p v i e w logo part no . year: ?10? = 2010 xth week: 01 ~ 53 1 4 8 5 c3021ld yy ww
DMC3021LSD document number: ds32152 rev. 1 - 2 7 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product package outline dimensions suggested pad layout so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
DMC3021LSD document number: ds32152 rev. 1 - 2 8 of 8 www.diodes.com may 2010 ? diodes incorporated DMC3021LSD new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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